Niiza, Japan

Ning Wei

This inventor holds 1 USPTO granted patent. Top assignee: Sanken Electric Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ning Wei. Retrieved from https://idiyas.com/inventor/ning-wei-2911p247

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Ning Wei: Innovator in Semiconductor Technology

Introduction

Ning Wei is a prominent inventor based in Niiza, Japan. She has made significant contributions to the field of semiconductor technology. With a focus on innovative designs, her work has the potential to impact various electronic applications.

Latest Patents

Ning Wei holds a patent for a semiconductor device and a method for forming the semiconductor device. This invention includes a unipolar component that features an epitaxial layer, a transition layer connected to the epitaxial layer, and a bypass component linked to the transition layer. The unipolar component and the bypass component are arranged in parallel, with the transition layer positioned between them. This design enhances the efficiency and functionality of semiconductor devices.

Career Highlights

Ning Wei is currently employed at Sanken Electric Co., Ltd., where she continues to develop cutting-edge technologies. Her work at Sanken Electric has allowed her to explore new frontiers in semiconductor design and application.

Collaborations

Throughout her career, Ning has collaborated with notable colleagues, including Hiroshi Shikauchi and Satoru Washiya. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Ning Wei's contributions to semiconductor technology exemplify her dedication to innovation. Her patent and ongoing work at Sanken Electric Co., Ltd. highlight her role as a leading inventor in her field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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