The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2020
Filed:
Jul. 10, 2018
Applicant:
Sanken Electric Co., Ltd., Niiza-Shi, Saitama, JP;
Inventors:
Hiroshi Shikauchi, Niiza, JP;
Satoru Washiya, Niiza, JP;
Yuki Tanaka, Niiza, JP;
Ning Wei, Niiza, JP;
Assignee:
Sanken Electric Co., Ltd., Niiza-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/20 (2006.01); H01L 21/8258 (2006.01); H01L 21/8234 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/8234 (2013.01); H01L 21/8258 (2013.01); H01L 29/2003 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device and a method for forming the semiconductor device. The semiconductor device includes: a unipolar component at least including an epitaxial layer; a transition layer connected to the epitaxial layer; and a bypass component connected to the transition layer; the unipolar component and the bypass component are connected in parallel and the transition layer is configured between the unipolar component and the bypass component.