Nanjing, China

Ning Chen

This inventor holds 1 USPTO granted patent. Top assignees: Jiangsu Jichuang Atomic Cluster Technology Research Institute Co., Ltd., Nanjing University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ning Chen. Retrieved from https://idiyas.com/inventor/ning-chen-5p53z3eq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Innovations of Ning Chen in Two-Dimensional Materials

Introduction

Ning Chen is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of materials science, particularly in the area of two-dimensional materials. His innovative approaches have led to advancements that are applicable in various technological domains.

Latest Patents

Ning Chen holds a patent titled "Method for doping two-dimensional material based on cluster ion implantation." This method involves selecting a two-dimensional material sample and placing it on a substrate. The implantation parameters are determined using a Monte Carlo particle tracing algorithm. The process includes replacing the sample with a thin film of two-dimensional material, where the thickness is ≤10 nm. A cluster beam is formed based on the determined parameters and is applied to the thin film. By changing the implantation parameters, different cluster beams can be created, which are then used on the thin film. Finally, annealing is performed on the implanted thin film to repair any damage caused by the implantation. This method is particularly beneficial for two-dimensional semiconductor materials, as it reduces damage to the crystal lattice during ion implantation.

Career Highlights

Ning Chen has worked with notable organizations such as Jiangsu Jichuang Atomic Cluster Technology Research Institute and Nanjing University. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.

Collaborations

Ning Chen has collaborated with several professionals, including Fengqi Song and Minhao Zhang. These partnerships have fostered a productive environment for innovation and research in two-dimensional materials.

Conclusion

Ning Chen's work in the field of two-dimensional materials showcases his innovative spirit and dedication to advancing technology. His patent on doping methods highlights the importance of reducing damage during material processing, paving the way for future developments in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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