Method for doping two-dimensional material based on cluster ion implantation

Abstract

A method for doping a two-dimensional material based on cluster ion implantation, including selecting a two-dimensional material sample to place same on a substrate; determining the selected implantation parameters by Monte Carlo particle tracing algorithm on the two-dimensional material sample; replacing the two-dimensional material sample, and placing a two-dimensional material thin film, wherein the thickness of the two-dimensional material thin film is ≤10 nm; selecting a determined implantation parameter to form a cluster beam and acting on a two-dimensional material thin film; changing the implantation parameters to form different cluster beams and acting on the two-dimensional material thin film; performing annealing on the two-dimensional material thin film implanted with cluster ions to repair the damage caused by implantation. The method is applicable to two-dimensional semiconductor materials by using ion clusters for implantation such that damage to the crystal lattice by the ion implantation is reduced.