Garching, Germany

Nils Thuerey

This inventor holds 1 USPTO granted patent. Top assignee: Seddi, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nils Thuerey. Retrieved from https://idiyas.com/inventor/nils-thuerey-cmqkn6ru

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Nils Thuerey and Collision-Free Garment Deformation

Introduction

Nils Thuerey is an inventor associated with Garching, Germany, and Seddi, Inc. His patent work addresses the challenge of generating detailed garment deformations while avoiding collisions with the underlying body.

Latest Patents

Thuerey is associated with 1 patent: “Learning of Garment Deformations in a Collision-Free Space.” The invention describes systems and methods that learn garment deformations designed to be essentially collision-free. It combines a diffused volumetric representation of the body with a garment-model subspace that provides a differentiable, canonical configuration. This subspace supports regression of garment deformation and dynamics, enabling fast predictions with reduced inference complexity. The approach aims to produce garments with substantial spatial and temporal detail and higher quality than previously achievable.

Career Highlights

Thuerey’s patent reflects work at the intersection of computational modeling and garment simulation. The disclosed methods use pretrained networks to generate garment deformations quickly while accounting for interactions between clothing and the body.

Collaborations

The listed coworkers associated with Thuerey include Igor Santesteban Garay and Miguel Ángel Otaduy Tristán.

Conclusion

Nils Thuerey’s patent work focuses on efficient, detailed garment simulation, with methods designed to predict realistic deformations while minimizing collisions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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