This inventor holds 1 USPTO granted patent. Top assignee: Globalfoundries Inc.. Active years: 2013.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2013
Title: Nihar-Ranjan Mohapatra: Innovator in Memory Device Technology
Introduction
Nihar-Ranjan Mohapatra is a notable inventor based in Leipzig, Germany. He has made significant contributions to the field of memory device technology. His innovative approach has led to the development of a unique method that enhances the performance of memory cell devices.
Latest Patents
Nihar-Ranjan Mohapatra holds a patent for a method of improving memory cell devices through ion implantation. The patent describes a process that includes performing a first ion implantation with dopant atoms to create extension implant regions for both pull-down and pass gate transistors. This method is designed to optimize the formation of memory devices, ensuring better efficiency and performance.
Career Highlights
Nihar-Ranjan Mohapatra is currently associated with Globalfoundries Inc., a leading semiconductor manufacturer. His work at the company focuses on advancing memory technology, contributing to the development of cutting-edge solutions in the industry. His expertise and innovative mindset have positioned him as a key player in the field.
Collaborations
Nihar-Ranjan has collaborated with Ralf Van Bentum, further enhancing the research and development efforts in memory device technology. Their combined expertise has led to significant advancements in the field.
Conclusion
Nihar-Ranjan Mohapatra's contributions to memory device technology through his innovative patent demonstrate his commitment to advancing the industry. His work continues to influence the development of efficient memory solutions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile