Globalfoundries Inc.

Nihar-Ranjan Mohapatra

Ralf Van Bentum

Disclosed herein is a method of forming a memory device. In one example, the method includes performing a first ion implantation process with dopant atoms of a first type to partially form extension implant regions for a pull-down transistor and to fully form extension implant regions for a pass gate transistor of the memory device and, after performing the first ion implantation process, forming a first masking layer that masks the pass gate transistor and exposes the pull-down transistor to further processing. The method concludes with the step of performing a second ion implantation process with dopant atoms of the first type to introduce additional dopant atoms into the extension implant regions for the pull-down transistor that were formed during the first ion implantation process while masking the pass gate transistor from the second ion implantation process with the first masking layer.

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Leipzig, Germany

Nihar-Ranjan Mohapatra