Ni Baibing

Title: Ni Baibing: Innovator in Semiconductor Technology

Introduction

Ni Baibing is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure that enhances capacitance density.

Latest Patents

Ni Baibing holds a patent for a semiconductor structure and method for forming a semiconductor structure. This patent describes a method that includes providing a base, forming a first electrode layer on the base, and creating a capacitance dielectric layer on both the top and sidewall of the first electrode layer. The second electrode layer is then formed to conformally cover the capacitance dielectric layer. This innovative approach increases the effective area between the second and first electrode layers, resulting in a capacitor structure that includes five parallel capacitances. This design significantly enhances the capacitance density of the structure.

Career Highlights

Throughout his career, Ni Baibing has worked with notable companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in both Beijing and Shanghai. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Ni Baibing has collaborated with several professionals in his field, including Hu Lianfeng and Hu Youcun. These collaborations have further enriched his work and innovations in semiconductor technology.

Conclusion

Ni Baibing is a key figure in the advancement of semiconductor technology, with a focus on enhancing capacitance density through innovative structures. His contributions continue to influence the industry and pave the way for future developments.