This inventor holds 1 USPTO granted patent. Top assignee: Semiconductor Manufacturing International (Beijing) Corporation. Active years: 2022.
Company Filing History:
Years Active: 2022
Title: Innovations by Ni Bai Bing in Semiconductor Technology
Introduction
Ni Bai Bing is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and a method for forming the same.
Latest Patents
Ni Bai Bing holds 1 patent for his invention titled "Semiconductor structure and method for forming the same." This patent describes a method that includes providing a base and forming a pattern transfer material layer above it. The process involves several steps, including first ion implantation to dope first ions into the pattern transfer material layer, forming first trenches, and etching the base to create a target pattern. This method enhances the accuracy of pattern transfer, which is crucial in semiconductor manufacturing.
Career Highlights
Ni Bai Bing is currently employed at Semiconductor Manufacturing International Corporation, where he continues to push the boundaries of semiconductor technology. His work is instrumental in advancing the capabilities of semiconductor devices, which are essential in various electronic applications.
Collaborations
Throughout his career, Ni Bai Bing has collaborated with talented individuals such as Zhu Chen and Yang Ming. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in the semiconductor field.
Conclusion
Ni Bai Bing's contributions to semiconductor technology exemplify the importance of innovation in this rapidly evolving industry. His patent and ongoing work at Semiconductor Manufacturing International Corporation highlight his role as a key player in advancing semiconductor technology.