Singapore, Singapore

Nguyen Lac

This inventor holds 1 USPTO granted patent. Top assignee: Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nguyen Lac. Retrieved from https://idiyas.com/inventor/nguyen-lac

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2003

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1 patent (USPTO):Explore Patents

Title: Nguyen Lac - Innovator in Semiconductor Technology

Introduction

Nguyen Lac is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has made significant strides in the field, particularly with his innovative patent that addresses challenges in integrated circuit manufacturing.

Latest Patents

Nguyen Lac holds a patent titled "Method of forming almost L-shaped spacer for improved ILD gap fill." This invention is crucial for enhancing the performance and reliability of semiconductor devices by improving the inter-layer dielectric (ILD) gap fill process.

Career Highlights

Nguyen Lac is currently employed at Chartered Semiconductor Manufacturing Ltd, a leading corporation in the semiconductor industry. His work focuses on developing advanced manufacturing techniques that contribute to the efficiency and effectiveness of semiconductor production.

Collaborations

Throughout his career, Nguyen has collaborated with talented colleagues, including Chiew Wah Yap and Zheng Zou. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Nguyen Lac's contributions to semiconductor technology through his patent and collaborative efforts highlight his role as an influential inventor in the industry. His work continues to impact the field positively, paving the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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