Brighton, United Kingdom

Neil L Clarke

This inventor holds 2 USPTO granted patents. Top assignee: Applied Materials, Inc.. Active years: 2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Neil L Clarke. Retrieved from https://idiyas.com/inventor/neil-l-clarke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 45(Granted Patents)


Company Filing History:


Years Active: 2004

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2 patents (USPTO):Explore Patents

Title: Neil L Clarke: Innovator in Ion Implantation Technology

Introduction

Neil L Clarke is a prominent inventor based in Brighton, GB. He has made significant contributions to the field of ion implantation technology, holding 2 patents that showcase his innovative approach to ion sources.

Latest Patents

One of Neil's latest patents is focused on ion sources for ion implantation apparatus. This invention relates to an ion source for an ion implanter, where the source material for providing desired ions is presented in the form of a plate or liner. This design allows for easy fitting into the reactant chamber of the ion source, enhancing the efficiency of the ion implantation process.

Career Highlights

Neil L Clarke is associated with Applied Materials, Inc., a leading company in the field of materials engineering. His work at this organization has allowed him to develop cutting-edge technologies that are crucial for advancements in semiconductor manufacturing.

Collaborations

Throughout his career, Neil has collaborated with notable professionals in the industry, including Adrian John Murrell and Peter Michael Banks. These collaborations have contributed to the development of innovative solutions in ion implantation technology.

Conclusion

Neil L Clarke's contributions to ion implantation technology through his patents and work at Applied Materials, Inc. highlight his role as a key innovator in the field. His inventions continue to influence advancements in semiconductor manufacturing and ion implantation processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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