Neil Basson

Title: Neil Basson: Innovator in Ion Implantation Technology

Introduction

Neil Basson is a notable inventor based in Hamilton, MA (US). He has made significant contributions to the field of ion implantation technology. His innovative work has led to the development of a unique patent that enhances the efficiency of ion beam systems.

Latest Patents

Neil Basson holds a patent for a system that utilizes hydrogen co-gas when using aluminum iodide as an ion source material. This patent describes an ion implantation system that features an ion source designed to form an ion beam from aluminum iodide. The system includes a beamline assembly that selectively transports the ion beam to an end station for the implantation of aluminum ions into a workpiece. An arc chamber is employed to create a plasma from the aluminum iodide, where arc current from a power supply dissociates aluminum ions from the aluminum iodide. Additionally, one or more extraction electrodes are used to extract the ion beam from the arc chamber. A hydrogen co-gas source is integrated to react with residual aluminum iodide and iodide, ensuring that the reacted materials are evacuated from the system.

Career Highlights

Neil Basson is currently associated with Axcelis Technologies, Inc., where he continues to push the boundaries of ion implantation technology. His work has been instrumental in advancing the capabilities of ion beam systems, making them more efficient and effective for various applications.

Collaborations

Throughout his career, Neil has collaborated with talented individuals such as Neil K Colvin and Tseh-Jen Hsieh. These collaborations have fostered an environment of innovation and have contributed to the success of their projects.

Conclusion

Neil Basson is a distinguished inventor whose work in ion implantation technology has made a significant impact in the field. His patent on hydrogen co-gas usage in ion sources exemplifies his innovative spirit and dedication to advancing technology.