Nampa, ID, United States of America

Neal J Koyle

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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4 patents (USPTO):Explore Patents

Title: Neal J Koyle: Innovator in Memory Technology

Introduction

Neal J Koyle is a prominent inventor based in Nampa, Idaho, known for his contributions to memory technology. With a total of four patents to his name, Koyle has made significant advancements in methods and systems that enhance memory compatibility and error correction in memory devices.

Latest Patents

Koyle's latest patents include innovative solutions such as "Speed bins to support memory compatibility." This patent describes methods, systems, and devices that allow a host device to read register values, including serial presence detect data of a memory module. The technology enables the host device to select a second speed bin associated with a different clock rate, ensuring optimal performance based on timing constraints. Another notable patent focuses on "Error injection methods using soft post-package repair (sPPR) techniques." This method outlines a process for operating a memory system that includes remapping logical addresses to physical addresses, thereby improving data integrity and reliability.

Career Highlights

Neal J Koyle is currently employed at Micron Technology Incorporated, a leading company in the semiconductor industry. His work at Micron has allowed him to develop cutting-edge technologies that address critical challenges in memory systems.

Collaborations

Throughout his career, Koyle has collaborated with notable colleagues, including Eric V Pohlmann and Randall J Rooney. These partnerships have contributed to the successful development of innovative memory solutions.

Conclusion

Neal J Koyle's contributions to memory technology through his patents and work at Micron Technology Incorporated highlight his role as a key innovator in the field. His advancements continue to influence the development of reliable memory systems.

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