Nathaniel R Baker

Title: Nathaniel R Baker: Innovator in High Power Laser Technology

Introduction: Nathaniel R Baker is a notable inventor based in Hampton, VA (US). He has made significant contributions to the field of semiconductor laser technology. His innovative approach has led to the development of a unique method for measuring the temperature of laser diode junctions.

Latest Patents: Nathaniel R Baker holds a patent titled "Forward voltage short-pulse technique for measuring high power laser array junction temperature." This invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. The technique involves applying a series of relatively short and low current monitor pulses to the laser diode. These pulses are applied in the period between the main drive current pulses necessary for the semiconductor to lase. At a sufficiently low current level, the laser diode does not lase and behaves similarly to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with high precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

Career Highlights: Nathaniel R Baker is currently associated with the United States of America as represented by the Administrator of NASA. His work has focused on advancing the understanding and measurement techniques of high power laser systems.

Collaborations: Nathaniel has collaborated with notable colleagues in his field, including Frazin Amzajerdian and Bruce W Barnes. Their combined expertise has contributed to the success of various projects and innovations.

Conclusion: Nathaniel R Baker's contributions to high power laser technology exemplify the spirit of innovation in the field. His patented method for measuring junction temperatures in laser diodes represents a significant advancement in semiconductor technology.