The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
May. 09, 2008
Byron L. Meadows, Hampton, VA (US);
Frazin Amzajerdian, Yorktown, VA (US);
Bruce W. Barnes, Yorktown, VA (US);
Nathaniel R. Baker, Hampton, VA (US);
Byron L. Meadows, Hampton, VA (US);
Frazin Amzajerdian, Yorktown, VA (US);
Bruce W. Barnes, Yorktown, VA (US);
Nathaniel R. Baker, Hampton, VA (US);
Abstract
The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.