Nathalie Batut

Title: Nathalie Batut: Innovator in Power Electronics

Introduction: Nathalie Batut is a notable inventor based in Hommes, France, recognized for her contribution to the field of power electronics. With a focus on innovative solutions in semiconductor technology, she has made a significant impact through her patented invention.

Latest Patents: Nathalie holds a patent for a "Bidirectional power switch controllable to be turned on and off." This invention entails a bidirectional power transistor formed horizontally in a semiconductor layer on a heavily-doped semiconductor wafer, featuring an interposed insulating layer. The wafer can be biased to a reference voltage, with specifications that optimize the product of average dopant concentration and thickness of the semiconductor layer ranging between 5·10 cm and 5·10 cm.

Career Highlights: Over her career, Nathalie has worked with prominent institutions such as STMicroelectronics (Tours) SAS, where she furthered her research and innovation. She also contributed to academics at Université François Rabelais UFR Sciences et Techniques, bridging the gap between research and practical application.

Collaborations: Throughout her journey, Nathalie has collaborated with talented colleagues, including Jean-Baptiste Quoirin and Luong Viêt Phung. These partnerships have facilitated the exchange of ideas and enhanced the development of her groundbreaking technologies.

Conclusion: Nathalie Batut's inventive spirit and her commitment to the field of power electronics underscore her role as a leading innovator. Her patent demonstrates not only her technical expertise but also her ability to address real-world challenges through innovation. As she continues her work, the impact of her contributions on the industry will undoubtedly resonate for years to come.