The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Nov. 22, 2010
Applicants:
Jean-baptiste Quoirin, Tours, FR;
Luong Viêt Phung, Saint Cyr sur Loire, FR;
Nathalie Batut, Hommes, FR;
Inventors:
Jean-Baptiste Quoirin, Tours, FR;
Luong Viêt Phung, Saint Cyr sur Loire, FR;
Nathalie Batut, Hommes, FR;
Assignees:
STMicroelectronics (Tours) SAS, Tours, FR;
Universite Francois Rabelais UFR Sciences et Techniques, Tours Cedex 1, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A bidirectional power transistor formed horizontally in a semiconductor layer disposed on a heavily-doped semiconductor wafer with an interposed insulating layer, the wafer being capable of being biased to a reference voltage, the product of the average dopant concentration and of the thickness of the semiconductor layer ranging between 5·10cmand 5·10cm.