Yokohama, Japan

Naoyuki Sato



Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 13(Granted Patents)


Location History:

  • Yokahama, JP (2012)
  • Yokohama, JP (2009 - 2014)

Company Filing History:


Years Active: 2009-2014

where 'Filed Patents' based on already Granted Patents

3 patents (USPTO):

Title: Naoyuki Sato: Innovator in Semiconductor Manufacturing

Introduction

Naoyuki Sato is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 3 patents. His work focuses on advanced manufacturing methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

Among his latest patents is a manufacturing method of a semiconductor device. This innovation includes a capacitor lower electrode formed on an adhesive layer, characterized by a surface roughness of 0.79 nm or less. The electrode has a (111) orientation that is inclined from a perpendicular direction to the upper surface of a substrate by 2.3° or less. Additionally, it features a ferroelectric layer with a similar (111) orientation inclined by 3.5° or less, along with a capacitor upper electrode. This method represents a significant advancement in semiconductor technology.

Career Highlights

Naoyuki Sato has worked with notable companies in the semiconductor industry, including Fujitsu Semiconductor Limited and Fujitsu Microelectronics Limited. His experience in these organizations has contributed to his expertise in semiconductor device manufacturing.

Collaborations

Some of his notable coworkers include Tomohiro Takamatsu and Junichi Watanabe. Their collaboration has likely played a role in the development of innovative solutions in the semiconductor field.

Conclusion

Naoyuki Sato's contributions to semiconductor manufacturing through his patents and career experiences highlight his importance in the industry. His innovative methods continue to influence the development of advanced semiconductor devices.

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