This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2010.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2010
Title: Naoto Higuchi: Innovator in Semiconductor Technology
Introduction
Naoto Higuchi, an accomplished inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With one patent to his name, he is recognized for his innovative approach to enhancing the performance and reliability of semiconductor devices.
Latest Patents
Higuchi's notable patent revolves around a semiconductor device and its manufacturing method. His invention addresses the issue of current characteristics that may vary when using a phase shift mask for patterning gate electrodes of Metal-Insulator-Semiconductor Field-Effect Transistors (MISFETs). The patent details a semiconductor device comprising a first transistor with a first gate electrode situated above a semiconductor substrate, along with a first source and a first drain. Adjacent to the first transistor is a second transistor, which has a second gate electrode paralleling the first. Additionally, the design incorporates a third gate electrode positioned between the first and second transistors, thereby optimizing the arrangement and functionality of these devices.
Career Highlights
Higuchi is currently associated with Kabushiki Kaisha Toshiba, a prominent name in the technology sector. His work focuses on the research and development of semiconductor devices, demonstrating his commitment to driving innovation in this critical area of technology.
Collaborations
Throughout his career, Higuchi has collaborated with distinguished colleagues, including Shinji Fujii and Kouichirou Inoue. These partnerships have undoubtedly enriched his work and contributed to the advancement of technologies in the semiconductor field.
Conclusion
Naoto Higuchi stands out as a pivotal figure in semiconductor innovation. His patent reflects a deep understanding of the challenges faced in current semiconductor manufacturing processes. Through his dynamic career at Kabushiki Kaisha Toshiba and his collaborations with fellow experts, Higuchi continues to shape the landscape of semiconductor technology, paving the way for future advancements in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile