The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Sep. 20, 2007
Shinji Fujii, Yokohama, JP;
Kouichirou Inoue, Yokosuka, JP;
Naoto Higuchi, Yokohama, JP;
Taisei Suzuki, Yokohama, JP;
Shinji Fujii, Yokohama, JP;
Kouichirou Inoue, Yokosuka, JP;
Naoto Higuchi, Yokohama, JP;
Taisei Suzuki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Semiconductor devices whose current characteristics can be prevented from varying even if a phase shift mask is used for patterning gate electrodes of MISFETs, and a manufacturing method thereof are disclosed. According to one aspect of the present invention, there is provided a semiconductor device comprising a first transistor including a first gate electrode provided above a semiconductor substrate, and a first source and a first drain provided in the semiconductor substrate, a second transistor arranged to be adjacent to the first transistor, and including a second gate electrode provided above the semiconductor substrate in parallel with the first gate electrode, and a second source and a second drain provided in the semiconductor substrate, and a third gate electrode provided between the first transistor and the second transistor and in parallel with the first and second gate electrodes.