Naoko Otani

Title: Naoko Otani: Innovator in Semiconductor Technology

Introduction

Naoko Otani is a prominent inventor based in Tokyo, Japan, known for his significant contributions to semiconductor technology. With a total of 5 patents to his name, Otani has made remarkable advancements in the field of non-volatile semiconductor devices.

Latest Patents

One of his latest patents is a semiconductor device comprising trench EEPROM. This innovative design features source regions positioned immediately below the bottom surface of trenches formed in a silicon substrate. The configuration allows for a reduction in the area of gate electrode portions while minimizing the level difference between regions with and without the gate electrode portion. Another notable patent is for a non-volatile semiconductor information storage device. This device enables a multi-value memory system that increases the amount of storable information without the need for additional memory transistors. The unique two-layer floating gate structure of the memory transistors enhances the device's capabilities.

Career Highlights

Naoko Otani is currently employed at Mitsubishi Electric Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing devices that are both efficient and compact, catering to the growing demands of modern electronics.

Collaborations

Otani has collaborated with notable colleagues, including Toshiharu Katayama and Yukari Imai, who have contributed to his research and development efforts in the semiconductor field.

Conclusion

Naoko Otani's innovative work in semiconductor technology has established him as a key figure in the industry. His patents reflect a commitment to advancing technology and improving the efficiency of electronic devices.