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Naohito Yoshida

USPTO Granted Patents = 10

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 214(Granted Patents)

Location History:

Itami, JP (1993 - 1998)
Tokyo, JP (1998 - 2001)

Company Filing History:

10 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

Years Active: 1993-2001

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10 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6307245 - Semiconductor device (2001-10-23),

2. 6013926 - Semiconductor device with refractory metal element (2000-01-11),

3. 5883407 - Semiconductor device (1999-03-16),

4. 5739558 - High electron mobility transistor including asymmetrical carrier supply (1998-04-14),

5. 5739062 - Method of making bipolar transistor (1998-04-14),

6. 5728611 - Method of fabricating semiconductor device (1998-03-17),

7. 5677553 - Semiconductor device strucutre having a two-dimensional electron gas and (1997-10-14),

8. 5414273 - Heterojunction bipolar transistor (1995-05-09),

9. 5210767 - Semiconductor laser (1993-05-11),

10. 5181086 - Strained superlattice semiconductor structure (1993-01-19),

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