The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1998
Filed:
Apr. 10, 1996
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of producing a semiconductor device includes preparing a semiconductor ingot having a (100) surface orientation and an orientation flat in a �011! direction; cutting the semiconductor ingot in a plane which is obtained by tilting the (100) surface by an angle .theta. about an axis of the tilting, obtained by rotating the �011! direction by an angle .phi. with the center of the (100) surface as an axis of the rotation, thereby producing a semiconductor wafer having a surface; producing a channel region in the semiconductor wafer; producing a refractory metal gate on the surface of the semiconductor wafer; and using the refractory metal gate as a mask, implanting dopant impurity ions into the semiconductor wafer in a direction perpendicular to the surface of the semiconductor wafer, thereby producing impurity-implanted regions in the semiconductor wafer. Channeling is prevented and the short-channel effect is suppressed.