Naohisa Ohta

Title: Naohisa Ohta: Innovator in Semiconductor Technology

Introduction: Naohisa Ohta, a notable inventor based in Yokohama, Japan, has made significant contributions to the field of semiconductor technology. With a focus on developing innovative storage devices, Ohta's work exemplifies the integration of advanced materials and cutting-edge engineering.

Latest Patents: Ohta holds a patent for a semiconductor storage device and storage system. This invention utilizes a pn junction type solar cell, strategically formed on a glass substrate. The design allows light from a light-emitting unit to penetrate the substrate, reaching an n-type semiconductor layer, generating electromotive force proportional to the amount of emitted light. Additionally, the device encompasses a control circuit, a mask ROM, a transmitting circuit, and an antenna, all situated atop the solar cell. To ensure durability and protection, the entire surface of the semiconductor storage device is enveloped in an insulating film, typically made of stable glass or silicon dioxide, effectively blocking outside air intrusion.

Career Highlights: Throughout his career, Ohta has worked with notable organizations such as Sharp Corporation and Kyoto University. His experiences in these reputable establishments have contributed to his development as a leading figure in semiconductor innovation.

Collaborations: Ohta has collaborated with esteemed colleagues including Shigeki Imai and Yukihiro Nakamura. Together, they have explored new avenues in semiconductor technologies, fostering a cooperative environment that enhances innovation.

Conclusion: Naohisa Ohta's contributions to semiconductor technology, represented by his innovative patent, underscore his role as a prominent inventor in the field. His work not only advances technology but also paves the way for future developments in semiconductor storage systems.