The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Sep. 26, 2008
Shigeki Imai, Osaka, JP;
Yukihiro Nakamura, Kyoto, JP;
Hiroyuki Ochi, Kyoto, JP;
Naohisa Ohta, Yokohama, JP;
Sadayasu Ono, Tokyo, JP;
Shigeki Imai, Osaka, JP;
Yukihiro Nakamura, Kyoto, JP;
Hiroyuki Ochi, Kyoto, JP;
Naohisa Ohta, Yokohama, JP;
Sadayasu Ono, Tokyo, JP;
Abstract
A pn junction type solar cell is formed in a predetermined region on a substrate made of glass. Light emitted from a light emitting unit reaches an n-type semiconductor layer after it passed through substrate. The solar cell generates electromotive force corresponding to a quantity of the emitted light. A control circuit, a mask ROM, a transmitting circuit and an antenna are formed on an upper side of the solar cell. A surface of a semiconductor storage device is entirely covered with an insulating film to block entry of outside air. The insulating film is typically formed of physicochemically stable glass or silicon dioxide.