Tokyo, Japan

Naohiro Shiraishi

This inventor holds 12 USPTO granted patents and 1 EPO patent. Top assignees: Mitsubishi Electric Corporation, Mitsumi Electric Company Ltd.. Active years: 2012-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohiro Shiraishi. Retrieved from https://idiyas.com/inventor/naohiro-shiraishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 91.7

 

Average Co-Inventor Count = 2.5

ph-index = 2

Forward Citations = 8(Granted Patents)


Location History:

  • Kanagawa, JP (2012)
  • Chiyoda-ku, JP (2017 - 2022)
  • Tokyo, JP (2022 - 2023)

Company Filing History:


Years Active: 2012-2023

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12 patents (USPTO):Explore Patents

Title: Naohiro Shiraishi: Innovator in Semiconductor Technology

Introduction

Naohiro Shiraishi is a prominent inventor based in Chiyoda-ku, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work has been instrumental in advancing the design and manufacturing processes of semiconductor devices.

Latest Patents

One of Naohiro Shiraishi's latest patents involves a semiconductor device and a method for manufacturing such a device. This innovative semiconductor device features first and second trenches, with a first layer positioned between them on the principal surface of a semiconductor substrate. The design includes a second layer that contacts and sandwiches the first trench along with the first layer, a third layer beneath the second layer, and a fourth layer that is in contact with the third layer but separated from the first trench. Additionally, a fifth layer is provided on the principal surface, sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, while the first, third, and fifth layers are semiconductors of a second conductivity type. The device also incorporates a gate trench electrode inside the first trench and an emitter trench electrode inside the second trench, both via an insulating film.

Career Highlights

Naohiro Shiraishi has worked with notable companies in the semiconductor industry, including Mitsubishi Electric Corporation and Mitsumi Electric Company Ltd. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Throughout his career, Naohiro has collaborated with esteemed colleagues such as Seiji Watanabe and Kotaro Fukui. These partnerships have fostered a collaborative environment that has led to significant advancements in their field.

Conclusion

Naohiro Shiraishi's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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