The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2023
Filed:
Jun. 03, 2021
Masatoshi Yatago, Tokyo, JP;
Naohiro Shiraishi, Tokyo, JP;
Katsunori Kondo, Tokyo, JP;
Noriyoshi Watanabe, Tokyo, JP;
Masatoshi Yatago, Tokyo, JP;
Naohiro Shiraishi, Tokyo, JP;
Katsunori Kondo, Tokyo, JP;
Noriyoshi Watanabe, Tokyo, JP;
MITSUMI ELECTRIC CO., LTD., Tokyo, JP;
Abstract
A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.