Tokyo, Japan

Naohiro Oogushi

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Electric Corporation. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naohiro Oogushi. Retrieved from https://idiyas.com/inventor/naohiro-oogushi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Naohiro Oogushi: Innovator in Semiconductor Technology

Introduction

Naohiro Oogushi is a prominent inventor based in Tokyo, Japan. He is known for his contributions to semiconductor technology, particularly in the development of flexible semiconductor devices. His innovative approach has led to advancements that enhance the performance and reliability of these devices.

Latest Patents

Naohiro Oogushi holds a patent for a semiconductor device that features a flexible semiconductor chip bonded to a heat radiation material using solder. This design allows the semiconductor chip to be pressed from above, effectively suppressing convex warpage. Additionally, it prevents voids from forming in the solder, thereby improving the heat radiation efficiency of the semiconductor device. He has 1 patent to his name.

Career Highlights

Oogushi is affiliated with Mitsubishi Electric Corporation, a leading company in the field of electrical and electronic equipment. His work at Mitsubishi Electric has positioned him as a key player in the advancement of semiconductor technologies.

Collaborations

Throughout his career, Naohiro Oogushi has collaborated with notable colleagues, including Takahiko Murakami and Ryoji Murai. These collaborations have further enriched his contributions to the field of semiconductor innovation.

Conclusion

Naohiro Oogushi's work in semiconductor technology exemplifies the impact of innovative thinking in enhancing device performance. His patent reflects a significant advancement in the industry, showcasing his dedication to improving technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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