Naohiro Matsukawa

Title: Naohiro Matsukawa and Semiconductor Memory Innovation.

Introduction

Naohiro Matsukawa is an inventor associated with Yokohama, Japan, and Kioxia Corporation. His patent work concerns semiconductor memory technology and the transmission of high-voltage signals.

Latest Patents

Matsukawa is credited with 1 patent: “Booster Circuit for Semiconductor Memory Device.” The patent describes semiconductor wiring in a P-type substrate, with an electrically floating N-well layer positioned where the poly wiring and substrate face each other. The N-well is not used as a circuit element and does not input or output signals. The wiring carries a high-voltage signal, including a write signal sent to the memory-cell array.

Career Highlights

Matsukawa’s listed invention addresses the design of wiring used to transmit write signals in semiconductor memory devices. His work is associated with Kioxia Corporation, a company focused on memory and storage technologies.

Collaborations

Matsukawa’s listed coworkers include Takao Sueyama and Keiko Kaneda. The available information identifies them as coworkers but does not specify their roles in the patent.

Conclusion

Naohiro Matsukawa’s patent reflects a focused contribution to semiconductor memory design, particularly the transmission of high-voltage write signals.