Echizen, Japan

Naofumi Shinya



 

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • Fukui-ken, JP (1999 - 2005)
  • Takefu, JP (2009)
  • Echizen, JP (2010 - 2020)
  • Fukui, JP (2018 - 2022)

Company Filing History:


Years Active: 1999-2025

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14 patents (USPTO):Explore Patents

Title: Naofumi Shinya: Innovator in SiC Single Crystal Production

Introduction

Naofumi Shinya is a prominent inventor based in Echizen, Japan, known for his significant contributions to the field of semiconductor materials. He holds a total of 14 patents, showcasing his expertise and innovative spirit in the production of silicon carbide (SiC) single crystals.

Latest Patents

Shinya's latest patents include a method for producing SiC single crystals and a method for suppressing dislocations in SiC single crystals. The first patent describes a process where a SiC crucible is created by impregnating a molten alloy of silicon and a metallic element that increases carbon solubility into a SiC sintered body. This method allows for the growth of high-quality SiC single crystals through a vapor phase process. The second patent focuses on using a crucible with an oxygen content of 100 ppm or less, which is essential for producing SiC single crystals with minimal dislocations.

Career Highlights

Throughout his career, Naofumi Shinya has made remarkable advancements in the field of materials science. His work has been instrumental in enhancing the quality of SiC single crystals, which are crucial for various applications in electronics and optoelectronics. His innovative methods have positioned him as a leader in the semiconductor industry.

Collaborations

Shinya has collaborated with notable colleagues, including Takehisa Minowa and Yu Hamaguchi. These partnerships have further enriched his research and development efforts, leading to groundbreaking advancements in SiC technology.

Conclusion

Naofumi Shinya's contributions to the field of SiC single crystal production have established him as a key figure in materials science. His innovative patents and collaborative efforts continue to influence the semiconductor industry positively.

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