The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2005

Filed:

Aug. 22, 2003
Applicants:

Toshihiro Tsumori, Fukui-ken, JP;

Masatoshi Ishii, Fukui-ken, JP;

Naofumi Shinya, Fukui-ken, JP;

Yu Hamaguchi, Fukui-ken, JP;

Yukimi Jyoko, Sabae, JP;

Inventors:

Toshihiro Tsumori, Fukui-ken, JP;

Masatoshi Ishii, Fukui-ken, JP;

Naofumi Shinya, Fukui-ken, JP;

Yu Hamaguchi, Fukui-ken, JP;

Yukimi Jyoko, Sabae, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L029/04 ;
U.S. Cl.
CPC ...
Abstract

In plating on an Si substrate, it has been strongly demanded to apply a treatment for providing an excellent adhesion so as to resist a post-processing such as polishing and for facilitating plating. Then, provided is a plated substrate adapted for hard disk medium comprising an Si single crystal; an amorphous layer on the substrate, the amorphous layer having thickness of 2 to 200 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag; a multicrystal layer on the amorphous layer, the multicrystal layer having thickness of 5 to 1000 nm and containing Si and one or more metals selected from a group consisting of Ni, Cu and Ag. Moreover, provided is a method for manufacturing a plated substrate adapted for hard disk medium comprising steps of applying a chemical etching treatment of a natural oxide film and a surface Si portion on an Si single crystal substrate; and forming a film on the etched surface of the substrate in a sulfate or hydrochloride bath containing no reductant within a pH range of 7.2 to 12.8 at liquid temperature of 70 to 100° C.


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