Gifu, Japan

Naofumi Sakai


Average Co-Inventor Count = 1.5

ph-index = 5

Forward Citations = 46(Granted Patents)


Location History:

  • Anpachi-gun, JP (2006)
  • Gifu, JP (2004 - 2008)
  • Kitakyusyu, JP (2007 - 2008)

Company Filing History:


Years Active: 2004-2008

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8 patents (USPTO):Explore Patents

Title: Naofumi Sakai: Innovator in Memory Technology

Introduction

Naofumi Sakai is a prominent inventor based in Gifu, Japan. He has made significant contributions to the field of memory technology, holding a total of 8 patents. His work focuses on developing advanced memory systems that enhance data integrity and performance.

Latest Patents

Sakai's latest patents include innovative solutions for memory systems. One of his notable inventions is a memory capable of suppressing disturbances that cause the disappearance of data in non-selected memory cells. This memory comprises a cell array with a bit line and a word line, which work together to access selected memory cells while maintaining the integrity of others. Another significant patent involves a memory that inhibits disturbances in non-selected cells by applying voltages of opposite directions during read and rewrite operations. These advancements demonstrate his commitment to improving memory technology.

Career Highlights

Naofumi Sakai is currently employed at Sanyo Electric Co., Ltd., where he continues to push the boundaries of memory technology. His work has been instrumental in developing solutions that address critical challenges in data storage and retrieval.

Collaborations

Sakai has collaborated with notable colleagues, including Hideaki Miyamoto and Shigeharu Matsushita. Their combined expertise has contributed to the success of various projects and innovations in the field.

Conclusion

Naofumi Sakai's contributions to memory technology are noteworthy, with a focus on enhancing data integrity through innovative solutions. His patents reflect a deep understanding of the challenges in memory systems and a commitment to advancing the field.

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