The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2008

Filed:

Jan. 10, 2006
Applicants:

Hideaki Miyamoto, Ogaki, JP;

Naofumi Sakai, Kitakyusyu, JP;

Kouichi Yamada, Gifu, JP;

Shigeharu Matsushita, Katano, JP;

Inventors:

Hideaki Miyamoto, Ogaki, JP;

Naofumi Sakai, Kitakyusyu, JP;

Kouichi Yamada, Gifu, JP;

Shigeharu Matsushita, Katano, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory capable of suppressing reduction of a reading voltage in data reading regardless of dispersion in a manufacturing process is provided. This memory comprises charge storage means, a first field-effect transistor and data determination means. The memory sets a voltage between a control terminal and a remaining first terminal of the first field-effect transistor to a threshold voltage for bringing the first field-effect transistor into an OFF-state in the vicinity of a boundary state between ON- and OFF-states through the threshold voltage of the first field-effect transistor.


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