Dallas, TX, United States of America

Nancy J Gabriel

This inventor holds 1 USPTO granted patent. Top assignee: Texas Instruments Corporation. Active years: 1987.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nancy J Gabriel. Retrieved from https://idiyas.com/inventor/nancy-j-gabriel-o8x0d041

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 1987

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1 patent (USPTO):Explore Patents

Title: Nancy J Gabriel: Innovator in Semiconductor Technology

Introduction

Nancy J Gabriel is a prominent inventor based in Dallas, TX (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of advanced bipolar devices. Her innovative work has led to the granting of a patent that showcases her expertise and creativity in this specialized area.

Latest Patents

Nancy J Gabriel holds a patent for a "Planar heterojunction bipolar device and method." This invention involves vertical AlGaAs heterojunction bipolar transistors with a planar structure. The patent describes a unique fabrication method where the emitter on the top structure has contacts to the base formed by the diffusion of zinc dopants from the surface. Additionally, contacts to the collector are created through the diffusion of sulfur dopants, rather than by etching connecting vias. The device isolation is achieved through zinc diffusions instead of mesa formation, utilizing rapid thermal pulses for the diffusion process. This innovative approach enhances the performance and reliability of semiconductor devices.

Career Highlights

Nancy J Gabriel is associated with Texas Instruments Corporation, a leading company in the semiconductor industry. Her work at Texas Instruments has allowed her to contribute to cutting-edge technologies and advancements in electronic components. With her expertise, she has played a vital role in the development of new products and solutions that meet the demands of modern technology.

Collaborations

Throughout her career, Nancy has collaborated with notable colleagues, including Han-Tzong Yuan and Shiban Kishan Tiku. These collaborations have fostered an environment of innovation and have led to the successful development of various projects within the semiconductor field.

Conclusion

Nancy J Gabriel is a distinguished inventor whose contributions to semiconductor technology have made a lasting impact. Her patent for the planar heterojunction bipolar device exemplifies her innovative spirit and technical expertise. Through her work at Texas Instruments Corporation and collaborations with esteemed colleagues, she continues to advance the field of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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