The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 1987
Filed:
Jun. 28, 1985
Applicant:
Inventors:
Nancy J Gabriel, Dallas, TX (US);
Han-Tzong Yuan, Dallas, TX (US);
Shiban K Tiku, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 34 ; 357 16 ; 357 49 ; 357 61 ;
Abstract
Vertical AlGaAs heterojunction bipolar transistors (30) with planar structure together with fabrication methods therefor are disclosed. For an emitter (44) on top structure, the contacts (46) to the base (38) are formed by a diffusion of zinc dopants from the surface, and contacts (42) to the collector (34, 36) are formed by diffusions of sulfur dopants from the surface rather than by etch of connecting vias. Further, device isolation is also provided by zinc diffusions (54) rather than by mesa formation. These diffusions are by rapid thermal pulses.