This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Nan-ying Yang: Innovator in Semiconductor Technology
Introduction
Nan-ying Yang is an inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative approach focuses on enhancing the ruggedness of semiconductor devices.
Latest Patent Applications
Nan-ying Yang's notable patent application is titled "Semiconductor Device with Enhanced Avalanche Ruggedness." This application describes a method that includes receiving a semiconductor device comprising a well region, a doped region, a plurality of gate electrodes, source regions, and drain regions. The design features a bulk region disposed in the doped region. The application details how the distances between transistors and the bulk region affect avalanche currents, aiming to improve device performance.
Conclusion
Nan-ying Yang's work in semiconductor technology showcases his innovative spirit and dedication to advancing the field. His contributions, particularly in enhancing avalanche ruggedness, highlight the importance of ongoing research and development in semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile