Company Filing History:
Years Active: 1997-2001
Title: Innovations of Nan-Hsiung Tsai
Introduction
Nan-Hsiung Tsai is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in dynamic random access memory (DRAM) integrated circuits. With a total of 4 patents, Tsai's work has advanced the capabilities of memory structures in electronic devices.
Latest Patents
One of his latest patents is focused on a high-density memory structure for DRAM integrated circuits. This innovation includes a recessed region defined in a semiconductor substrate, featuring substantially vertical sides extending from a bottom surface. Adjacent to this recessed region, a field effect transistor is defined. A capacitor structure, which consists of a lower capacitor plate, a capacitor dielectric, and an upper capacitor plate, is also defined in the recessed region and over the field effect transistor, thereby providing a greater capacitor surface.
Another notable patent involves a semiconductor having a self-aligned polysilicon electrode layer. This method and structure for a lower capacitor electrode in a dynamic random access integrated circuit involves forming a polysilicon gate layer over a thin layer of oxide in a first region of a semiconductor substrate. An oxide layer is then formed over the polysilicon gate layer. The polysilicon layer, which is doped by source/drain implant, self-aligns and forms over a second region of the semiconductor substrate and over the oxide layer on the polysilicon gate layer. This sequence of steps results in a self-aligned lower capacitor electrode for a dynamic random access memory integrated circuit.
Career Highlights
Nan-Hsiung Tsai is currently employed at Mosel Vitelic Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in enhancing the performance and efficiency of memory technologies.
Collaborations
Tsai collaborates with Min-Liang Chen, contributing to advancements in their field through shared expertise and innovative ideas.
Conclusion
Nan-Hsiung Tsai's contributions to semiconductor technology, particularly in DRAM integrated circuits, highlight his role as a key inventor in the industry. His patents reflect a commitment to innovation and excellence in memory technology.