Nam Hwang

Title: Nam Hwang: Innovator in RF LDMOS Technology

Introduction

Nam Hwang is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of RF LDMOS devices. With a total of 7 patents to his name, Hwang's work has advanced the efficiency and performance of power devices.

Latest Patents

Hwang's latest patents include innovative designs and methods for RF LDMOS structures. One notable patent is the "Device structure of RF LDMOS with trench type sinker." This invention features a device structure that incorporates a trench type sinker formed using a trench process. The design includes a semiconductor layer of a first conductive type, with a field area created in a trench structure. A gate electrode is positioned on the semiconductor layer, and a channel layer of a second conductive type is formed through lateral diffusion. This structure effectively reduces parasitic resistance and capacitance while eliminating the need for high-temperature diffusion processes.

Another significant patent is the "Method of making a HF LDMOS structure with a trench type sinker." This method outlines the steps for forming an HF power device, including etching and doping processes to create a semiconductor layer and various components such as a gate electrode and source area. The detailed methodology enhances the efficiency of the device and contributes to advancements in semiconductor technology.

Career Highlights

Nam Hwang has worked with notable organizations in the field of electronics and telecommunications. He has been associated with the Electronics and Telecommunications Research Institute and Korea Telecom. His experience in these institutions has allowed him to collaborate on various projects that push the boundaries of semiconductor innovation.

Collaborations

Hwang has collaborated with esteemed colleagues, including Sang Hwan Lee and Min Kyu Song. Their joint efforts have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Nam Hwang's contributions to RF LDMOS technology exemplify his innovative spirit and dedication to advancing semiconductor devices. His patents and career achievements reflect a commitment to excellence in the field, making him a notable figure in the world of inventions.