The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2005
Filed:
Dec. 28, 2000
Cheon-soo Kim, Taejon, KR;
Hyun-kyu Yoo, Taejon, KR;
Nam Hwang, Taejon, KR;
Jung-woo Park, Taejon, KR;
Cheon-Soo Kim, Taejon, KR;
Hyun-Kyu Yoo, Taejon, KR;
Nam Hwang, Taejon, KR;
Jung-Woo Park, Taejon, KR;
Abstract
A device structure of a LDMOSFET has trench type sinker formed using a trench process. A semiconductor layer of a first conductive type is formed within the device structure. A field area is formed in a trench structure on one side of the semiconductor layer and a gate electrode is formed on a given surface of the semiconductor layer. A channel layer of a second conductive type is formed by laterally diffusion from the field area to a width containing both sides of the gate electrode. The source area of LDMOS is electrically connected with the substrate through the sinker. By a piercing through the source area, the sinker divides the source area into two source areas. This division reduces the parasitic resistance as well as parasitic capacitance. In addition, the device structure eliminates the need for high temperature diffusion process and reduces lateral diffusion of the sinker.