This inventor holds 1 USPTO granted patent. Top assignee: Electronics and Telecommunications Research Institute. Active years: 2005.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2005
Title: Hyun-Kyu Yoo: Innovator in RF LDMOS Technology
Introduction
Hyun-Kyu Yoo is a prominent inventor based in Taejon, South Korea. He has made significant contributions to the field of electronics, particularly in the development of RF LDMOS technology. His innovative work has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
Hyun-Kyu Yoo holds a patent for a "Device structure of RF LDMOS with trench type sinker." This invention features a device structure of a LDMOSFET that incorporates a trench type sinker formed using a trench process. The design includes a semiconductor layer of a first conductive type, with a field area created in a trench structure on one side. A gate electrode is positioned on a specific surface of the semiconductor layer, while a channel layer of a second conductive type is formed through lateral diffusion from the field area. The innovative structure allows for the source area of the LDMOS to be electrically connected with the substrate through the sinker, effectively dividing the source area into two sections. This division reduces parasitic resistance and capacitance, while also eliminating the need for high-temperature diffusion processes.
Career Highlights
Hyun-Kyu Yoo is affiliated with the Electronics and Telecommunications Research Institute, where he continues to push the boundaries of technology. His work has been instrumental in advancing the capabilities of RF LDMOS devices, making them more efficient and reliable for various applications.
Collaborations
He has collaborated with notable colleagues, including Cheon-Soo Kim and Nam Hwang, contributing to a dynamic research environment that fosters innovation and development in the field of electronics.
Conclusion
Hyun-Kyu Yoo's contributions to RF LDMOS technology exemplify the impact of innovative thinking in electronics. His patent and ongoing work at the Electronics and Telecommunications Research Institute highlight his role as a key figure in advancing electronic device technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile