Tsukuba, Japan

Nakao Akutsu

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Sanso Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nakao Akutsu. Retrieved from https://idiyas.com/inventor/nakao-akutsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 110(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Nakao Akutsu: Innovator in CVD Technology

Introduction

Nakao Akutsu is a prominent inventor based in Tsukuba, Japan. He is known for his significant contributions to the field of compound semiconductor technology. His innovative work has led to advancements in the growth of high-quality thin films.

Latest Patents

Nakao Akutsu holds a patent for a CVD system and CVD process. This invention provides a method to grow excellent compound semiconductor thin films of two or more components with minimal defects. The system boasts high source gas utilization efficiency and increased productivity. The CVD process involves introducing at least two kinds of source gases parallel to the surface of a substrate placed in a reactor. This method allows for the effective growth of compound semiconductor thin films.

Career Highlights

Nakao Akutsu is associated with Nippon Sanso Corporation, where he has made significant contributions to the development of CVD technology. His work has been instrumental in enhancing the efficiency and quality of semiconductor manufacturing processes.

Collaborations

Nakao has collaborated with notable colleagues, including Yoshiaki Inaishi and Ichitaro Waki. Their combined expertise has furthered advancements in the semiconductor industry.

Conclusion

Nakao Akutsu's innovative contributions to CVD technology have made a lasting impact on the semiconductor field. His work continues to influence the development of high-quality thin films, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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