The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Nov. 21, 1997
Takayuki Arai, Tsukuba, JP;
Junichi Hidaka, Tsukuba, JP;
Koh Matsumoto, Tsukuba, JP;
Nakao Akutsu, Tsukuba, JP;
Kazuhiro Aoyama, Tsukuba, JP;
Yoshiaki Inaishi, Tsukuba, JP;
Ichitaro Waki, Tsukuba, JP;
Nippon Sanso Corporation, Tokyo, JP;
Abstract
Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate,placed in a reactor,to grow a compound semiconductor thin film of two or more components on the surface of the substrate,. The CVD system contains two separators,disposed in the reactor,on the upstream side of the substrate mounting section to be parallel to the surface of the substrate,so as to define in the reactor three parallel layers of passages consisting of a first passage,, a second passage,and a third passage,; a first CVD gas introducing pipe,communicating to the first passage,; a second CVD gas introducing pipe,communicating to the second passage,; and a deposition accelerating gas introducing pipe,communicating to the third passage