Tsukuba, Japan

Junichi Hidaka

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Sanso Corporation. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Junichi Hidaka. Retrieved from https://idiyas.com/inventor/junichi-hidaka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 110(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Junichi Hidaka: Innovator in CVD Technology

Introduction

Junichi Hidaka is a prominent inventor based in Tsukuba, Japan. He is known for his contributions to the field of compound semiconductor technology. His innovative work has led to advancements in the growth of high-quality thin films.

Latest Patents

Hidaka holds a patent for a CVD system and process. This invention allows for the growth of excellent compound semiconductor thin films with minimal defects. The system enhances source gas utilization efficiency and increases productivity. The CVD process involves introducing at least two kinds of source gases parallel to the substrate surface within a reactor. This method results in the effective growth of compound semiconductor thin films.

Career Highlights

Hidaka's career is marked by his dedication to research and development in semiconductor technology. His work at Nippon Sanso Corporation has been instrumental in advancing CVD systems. He has focused on improving the efficiency and quality of semiconductor manufacturing processes.

Collaborations

Hidaka has collaborated with notable colleagues, including Ichitaro Waki and Nakao Akutsu. These partnerships have contributed to the success of his projects and innovations in the field.

Conclusion

Junichi Hidaka's contributions to CVD technology have significantly impacted the semiconductor industry. His innovative approaches continue to pave the way for advancements in compound semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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