This inventor holds 1 USPTO granted patent. Top assignees: Nihon Kogyo Kabushiki Kaisha, Nippon Telegraph and Telephone Corporation. Active years: 1988.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 17 
1 out of 5,300 
Years Active: 1988
Title: Nakahachiro Honna: Innovator in High-Purity Metal Targets
Introduction
Nakahachiro Honna is a notable inventor based in Musashino, Japan. He is recognized for his contributions to the field of high-purity metals, particularly in the development of targets for LSI electrodes. His innovative work has led to advancements in semiconductor technology.
Latest Patents
Honna holds a patent for a high-purity metal and metal silicide target for LSI electrodes. This patent describes a high-purity molybdenum target or high-purity molybdenum silicide target that contains a metallic molybdenum with an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. The process for producing such a target involves a wet purification process followed by a series of dry processings.
Career Highlights
Throughout his career, Honna has worked with prominent companies, including Nihon Kogyo Kabushiki Kaisha and Nippon Telegraph and Telephone Corporation. His expertise in high-purity materials has made significant impacts in the semiconductor industry.
Collaborations
Honna has collaborated with notable colleagues such as Hideo Oikawa and Takao Amazawa. Their combined efforts have contributed to advancements in the field of high-purity metals.
Conclusion
Nakahachiro Honna's work in high-purity metal targets has established him as a key figure in semiconductor technology. His innovative patent and collaborations highlight his significant contributions to the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile