The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 1988
Filed:
Jun. 23, 1986
Applicant:
Inventors:
Hideo Oikawa, Atsugi, JP;
Takao Amazawa, Atsugi, JP;
Nakahachiro Honna, Musashino, JP;
Hideo Miyazaki, Toda, JP;
Iwao Kyono, Toda, JP;
Nobuyuki Mori, Tokyo, JP;
Yoshiharu Katoh, Toda, JP;
Masami Kuroki, Toda, JP;
Assignees:
Nihon Kogyo Kabushiki Kaisha, Tokyo, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
428664 ; 428620 ; 428641 ; 75 / ; 75 / ; 75 6 / ; 75 84 ; 148423 ; 357 231 ; 357 67 ; 357 71 ; 419 28 ; 420429 ; 420430 ;
Abstract
There is provided a high-purity molybdenum target or high-purity molybdenum silicide target for LSI electrodes which comprises a high-purity metallic molybdenum having an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. Further, a process is provided for producing such target comprising a wet purification processing followed by a series of dry processings.