Company Filing History:
2 out of 17 
1 out of 522 
1 out of 5,290 
Years Active: 1986-1988
Title: Iwao Kyono: Innovator in High-Purity Metal Targets
Introduction
Iwao Kyono is a notable inventor based in Toda, Japan, recognized for his contributions to the field of high-purity metal targets for LSI electrodes. With a total of two patents to his name, Kyono has made significant advancements in materials science, particularly in the production of high-purity metals.
Latest Patents
Kyono's latest patents include a "High-purity metal and metal silicide target for LSI electrodes" and a "Process for producing high-purity metal targets for LSI electrodes." The first patent describes a high-purity molybdenum target or high-purity molybdenum silicide target that contains an alkali metal content of not more than 100 ppb and a radioactive element content of not more than 10 ppb. The process for producing this target involves a wet purification processing followed by a series of dry processings. The second patent outlines a similar high-purity high-melting metal target, emphasizing the use of metals such as molybdenum, tungsten, titanium, niobium, or tantalum, with molybdenum being the preferred choice.
Career Highlights
Throughout his career, Iwao Kyono has worked with prominent companies, including Nihon Kogyo Kabushiki Kaisha and Nippon Telegraph and Telephone Public Corporation. His work has focused on developing innovative materials that meet the stringent requirements of modern electronics.
Collaborations
Kyono has collaborated with notable colleagues such as Hideo Oikawa and Takao Amazawa, contributing to advancements in the field of high-purity metals.
Conclusion
Iwao Kyono's work in high-purity metal targets has positioned him as a key figure in materials science, particularly for applications in LSI electrodes. His patents reflect a commitment to innovation and quality in the production of essential materials for the electronics industry.