Location History:
- Kyungki-do, KR (2005)
- Yongin-shi, KR (2005)
- Suwon-si, KR (2008 - 2012)
- Gyeonggi-do, KR (2008 - 2014)
- Hwaseong-si, KR (2016 - 2018)
Company Filing History:
Years Active: 2005-2018
Title: The Innovations of Nak-Won Heo
Introduction
Nak-Won Heo is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work primarily focuses on enhancing the efficiency and reliability of semiconductor memory devices.
Latest Patents
One of Nak-Won Heo's latest patents involves semiconductor memory devices that include redundancy memory cells. This innovative semiconductor memory device features a memory cell array, a repair control circuit, and a refresh control circuit. The memory cell array consists of multiple memory cells along with several redundancy memory cells. The repair control circuit is designed to receive a repair command and execute a repair operation on a defective memory cell during a designated repair mode. Additionally, the refresh control circuit performs a refresh operation on the non-defective memory cells during this repair mode, ensuring optimal performance and reliability.
Career Highlights
Nak-Won Heo is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His role at Samsung has allowed him to work on cutting-edge technologies and contribute to advancements in semiconductor memory devices. His expertise in this area has positioned him as a key figure in the industry.
Collaborations
Throughout his career, Nak-Won Heo has collaborated with notable colleagues, including Chang-Sik Yoo and Yun-Young Lee. These collaborations have fostered innovation and have led to the development of groundbreaking technologies in the semiconductor field.
Conclusion
Nak-Won Heo's contributions to semiconductor technology through his patents and collaborations highlight his importance as an inventor. His work continues to influence the industry and drive advancements in memory device technology.