The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2008
Filed:
Jan. 04, 2006
Applicants:
Nak-won Heo, Suwon-si, KR;
Kye-hyun Kyung, Yongin-si, KR;
Inventors:
Nak-Won Heo, Suwon-si, KR;
Kye-Hyun Kyung, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor memory device that includes a memory cell connected to a wordline and a wordline voltage generator. The wordline voltage generator supplies a first negative voltage to the wordline in a standby state and supplies a second negative voltage that is lower with respect to ground than the first negative voltage to the wordline in a refresh operation. Accordingly, a leakage current generated at a transistor of a memory cell by gate-induced drain leakage (GIDL) is suppressed to enhance the performance of a refresh operation.