Nagatoshi Tsunoda

Title: Nagatoshi Tsunoda: Innovator in Hybrid Bonding Technologies

Introduction

Nagatoshi Tsunoda is a prominent inventor based in Chandler, AZ (US). He has made significant contributions to the field of hybrid bonding technologies, holding a total of 2 patents. His work focuses on advancing the methods and structures used in semiconductor manufacturing.

Latest Patents

Tsunoda's latest patents include innovative designs for mixed hybrid bonding structures. These embodiments feature a composite dielectric layer that incorporates an organic dielectric material with a variety of inorganic filler materials. Within this composite dielectric layer, one or more conductive substrate interconnect structures are integrated. A die is positioned on the composite dielectric layer, which contains one or more conductive die interconnect structures embedded within a die dielectric material. The conductive die interconnect structures are directly bonded to the conductive substrate interconnect structures, while the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Career Highlights

Nagatoshi Tsunoda is currently employed at Intel Corporation, where he continues to push the boundaries of technology in the semiconductor industry. His expertise in hybrid bonding has positioned him as a key player in the development of advanced manufacturing techniques.

Collaborations

Some of Tsunoda's notable coworkers include Shawna M Liff and Adel A Elsherbini, who collaborate with him on various projects within Intel Corporation.

Conclusion

Nagatoshi Tsunoda's contributions to hybrid bonding technologies exemplify his innovative spirit and dedication to advancing semiconductor manufacturing. His patents reflect a commitment to improving the efficiency and effectiveness of electronic components.