Company Filing History:
Years Active: 2011-2012
Title: Myung-jin Kang: Innovator in Non-Volatile Memory Technology
Introduction
Myung-jin Kang is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of non-volatile memory devices, holding a total of 3 patents. His work focuses on enhancing the efficiency and performance of memory technologies.
Latest Patents
One of his latest patents is for a non-volatile memory device that includes a phase-change material. This device operates at a low voltage and consumes less power. It features a lower electrode, a phase-change material layer that is electrically connected to the lower electrode, and an upper electrode. The phase-change material has a specific composition that includes InSbTe, with possible substitutions of silicon and tin for indium, arsenic and bismuth for antimony, and selenium for tellurium.
Another notable patent involves a method for manufacturing a phase changeable memory unit with an enhanced structure to reduce reset current. This unit consists of a lower electrode, an insulating interlayer structure with an opening, a phase changeable material layer, and an upper electrode. The design of the insulating interlayer structure allows for a gradual decrease in the width of the opening, which exposes the lower electrode and optimizes the performance of the memory unit.
Career Highlights
Myung-jin Kang is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory devices.
Collaborations
He has collaborated with notable colleagues, including Doo-Hwan Park and Jeong-Hee Park, contributing to various projects that enhance memory technology.
Conclusion
Myung-jin Kang's contributions to non-volatile memory technology demonstrate his commitment to innovation and excellence in the field. His patents reflect a deep understanding of materials and engineering, paving the way for future advancements in memory devices.